Source: Global Semiconductor Watch

On August 8, power semiconductor giant Infineon announced that it has officially launched the first phase of a new fab in Malaysia, which will be the world's largest and most competitive 200 mm (8 inch) silicon carbide (SiC) power semiconductor fab, with mass production expected to begin in 2025.

The first phase of the fab, with an investment of €2 billion, will focus on silicon carbide and will also include gallium nitride (GaN) epitaxy; The second phase, with an investment of up to €5 billion, will create the world's largest and most efficient 200 mm SiC power fab.

Infineon pointed out that the first phase of the third plant in Malaysia's Kulin High-tech Park took only 13 months from construction to completion, which is already ahead of schedule. At present, the initial silicon carbide production is still mainly mature 6-inch wafers, and 2027 will be fully shifted to 8-inch wafers.

Infineon has received design orders with a total value of around €5 billion and has received advances of around €1 billion from existing and new customers for the ongoing expansion of the Gulin 3 plant. The design orders include six Oems in the automotive industry as well as customers in the renewable energy and industrial sectors, involving SAIC, Ford, Chery and others.